BUI NGUYEN QUOC TRINH, Ph. D. Post-Doctoral Researcher @Japan Science and Technology Agency (JST), ERATO, Shimoda Nano-liquid Process Project, 2-5-3 Asahidai, Nomi, Ishikawa 923-1211, Japan Tel:   +81 (761) 51-7781 Fax:  +81 (761) 51-7791 E-mail: trinhbnq@ishikawa-sp.com URL: http://www.jst.go.jp/erato/project/snp_P/snp_P.html and (Joint-researcher) @Japan Advanced Institute of Science and Technology 1-1 Asahidai, Nomi, Ishikawa 923-1292, JAPAN E-mail: tnq-bui@jaist.ac.jp

LIST OF PUBLICATIONS

Published Papers

1.	Totally solution-processed ferroelectric-gate thin-film transistor Takaaki Miyasako,^a) Bui Nguyen Quoc Trinh,^b)Masatoshi Onoue, Toshihiko Kaneda, Phan Trong Tue, Eisuke Tokumitsu, and Tatsuya Shimoda Applied Physics Letters, Vol. 97, 173509 (2010). DOI: 10.1063/1.3508958 URL: http://apl.aip.org/resource/1/applab/v97/i17/p173509_s1
2.	A low-temperature crystallization path for device-quality ferroelectric films Jinwang Li, Hiroyuki Kameda, Bui Nguyen Quoc Trinh, Takaaki Miyasako, Phan Trong Tue, Eisuke Tokumitsu, Tadaoki Mitani, and Tatsuya Shimoda Applied Physics Letters, Vol. 97, 102905 (2010). DOI: 10.1063/1.3486462 URL: http://apl.aip.org/resource/1/applab/v97/i10/p102905_s1
3.	Synthesis of undoped and M-doped ZnO (M = Co, Mn) nanopowder in water using microwave irradiation Nguyen Viet Tuyen, Ta Dinh Canh, Nguyen Ngoc Long, Nguyen Xuan Nghia, Bui Nguyen Quoc Trinh and Zhongrong Shen Journal of Physics: Conference Series (J. Phys.: Conf. Ser.) Vol. 187, 012020 (2009). DOI: 10.1088/1742-6596/187/1/012020 URL: http://iopscience.iop.org/1742-6596/187/1/012020/
4.	Disturb-Free Writing Operation for Ferroelectric-Gate Field-Effect Transistor Memories With Intermediate Electrodes Susumu Horita and Bui Nguyen Quoc Trinh IEEE Transactions on Electron Devices, Vol.56, No.11, 3090-3096 (2009). DOI: 10.1109/TED.2009.2032744 URL: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=5306147
5.	Nondestructive Readout of Ferroelectric-Gate Field-Effect Transistor Memory With an Intermediate Electrode by Using an Improved Operation Method Susumu Horita and Bui Nguyen Quoc Trinh IEEE Transactions on Electron Devices, Vol.55, No.11, 3200-3207 (2008). DOI: 10.1109/TED.2008.2003329  URL: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4668546
6.	Improvement of Nondestructive Readout of Ferroelectric Gate FET Memory with an Intermediate Electrode by using New Data Writing and Reading Methods Bui Nguyen Quoc Trinh and Susumu Horita IEEE Proceedings of 16^th International Symposium on the Applications of Ferroelectrics (ISAF2007), Nara, Japan, p58-61 (2007). DOI: 10.1109/ISAF.2007.4393167 URL: http://www.ieeexplore.ieee.org/xpls/abs_all.jsp?isnumber=4393147&arnumber=4393167&count=284&index=19
7.	Fabrication of Polycrystalline Ferroelectric Gate FET Memory with an Intermediate Electrode Bui Nguyen Quoc Trinh and Susumu Horita IEEE Proceedings of 15^th International Symposium on the Applications of Ferroelectrics (ISAF2006), North Carolina, United States, p77-80 (2006). DOI: 10.1109/ISAF.2006.4387837 URL: http://www.ieeexplore.ieee.org/xpls/abs_all.jsp?isnumber=4387811&arnumber=4387837&count=98
8.	Operation of Ferroelectric Gate Field-Effect Transistor Memory with Intermediate Electrode using Polycrystalline Capacitor and Metal–Oxide–Semiconductor Field-Effect Transistor Bui Nguyen Quoc Trinh and Susumu Horita Japanese Journal of Applied Physics, Vol. 45, 7341–7344 (2006). DOI: 10.1143/JJAP.45.7341 URL: http://jjap.ipap.jp/link?JJAP/45/7341/
9.	Control of Preferential Orientation of Platinum Films on RuO2/SiO2/Si Substrates by Sputtering Bui Nguyen Quoc Trinh and Susumu Horita Japanese Journal of Applied Physics, Vol. 45, 8810-8816 (2006). DOI: 10.1143/JJAP.45.8810 URL: http://jjap.ipap.jp/link?JJAP/45/8810/
10.	Spin Reorientation in ErCo10-xFexMo2 Compounds Nguyen Hoang Luong, Nguyen Chau, Nguyen Duc Dung and Bui Nguyen Quoc Trinh Physica B: Condensed Matter, Vol. 327, 262-265 (2003). DOI: 10.1016/S0921-4526(02)01756-8 URL: http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TVH-47JCXXY-X&_user=119450&_coverDate=04%2F30%2F2003&_rdoc=1&_fmt=high&_orig=search&_sort=d&_docanchor=&view=c&_acct=C000009579&_version=1&_urlVersion=0&_userid=119450&md5=19fd8f9368633d9e0234ad6a936a7dd6

Presentations

1.	Fabrication and Characterization of a Ferroelectric-Gate FET With a ITO/PZT/SRO/Pt Stacked Structure Phan Trong Tue, Bui Nguyen Quoc Trinh, Takaaki Miyasako, Eisuke Tokumitsu, Tatsuya Shimoda The 22^nd International Conference of Microelectronics, Cairo, Egypt, (2010/12/19-22).
2.	Ferroelectric-Gate Thin-Film Transistor Fabricated by Total Solution Deposition Process Takaaki Miyasako, Bui Nguyen Quoc Trinh, Toshihiko Kaneda, Masatoshi Onoue, Phan Trong Tue, Eisuke Tokumitsu, and Tatsuya Shimoda Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials (SSDM 2010), E-6-4L (Late News, oral), p.1092-1093，Tokyo, Japan, (2010).
3.	Optimization of Pt and PZT films for ferroelectric-gate thin film transistors Phan Trong Tue, Takaaki Miyasako, Bui Nguyen Quoc Trinh, Jinwang Li, Eisuke Tokumitsu, Tatsuya Shimoda Extended Abstracts of 18^th International Symposium on the Applications of Ferroelectrics (ISAF) and 12^th International Meeting on Ferroelectricity (IMF), Xian, China (2009).
4.	Writing Disturbance-Free of a Ferroelectric Gate Field Effect Transistor Memory with an Intermediate Electrode Susumu Horita and Bui Nguyen Quoc Trinh Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials (SSDM 2008), P-4-8L(Late News, poster), p.470-471，Tsukuba, Japan, (2008).
5.	Using New Operation Method for Improvement in Nondestructive Readout of Ferroelectric Gate FET Memory with an Intermediate Electrode Bui Nguyen Quoc Trinh and Susumu Horita Extended Abstract of 20^th International Symposium on Integrated Ferroelectrics (ISIF 2008), Biopolis, Singapore, p11 (2008).
6.	Nondestructive Readout of Integrated Ferroelectric Gate FET Memory with Intermediate Electrode Improved by New Data Writing and Reading Method Bui Nguyen Quoc Trinh and Susumu Horita Extended Abstract of 20^th International Symposium on Integrated Ferroelectrics (ISIF 2008), Biopolis, Singapore, p18 (2008).
7.	Nonreturning Domains and Disturb Phenomena in Ferroelectric Gate FET Memory with an Intermediate Electrode Susumu Horita and Bui Nguyen Quoc Trinh Extended Abstract of 55^th Spring Meeting of the Japan Society of Applied Physics, Tokyo, Japan, 580 (2008).
8.	Optimization of Writing- and Reading-Pulses for FET Type Ferroelectric Memory with an Intermediate Electrode  Susumu Horita and Bui Nguyen Quoc Trinh Extended Abstract of 69^th Autumn Meeting of the Japan Society of Applied Physics, Aichi, Japan, (2008).
9.	Improvement of Characteristics of FET type Ferroelectric Memory with an Intermediate Electrode Susumu Horita, Bui Nguyen Quoc Trinh and Kensuke Nishioka Proceedings of 4^th Thin Film Materials and Devices Meeting (in Japanese), Kyoto, Japan, p32-35 (2007).
10.	Improvement in Nondestructive Readout of Integrated Ferroelectric Gate FET Memory with an Intermediate Electrode Susumu Horita, Bui Nguyen Quoc Trinh and Kensuke Nishioka Extended Abstract 68^th Autumn Meeting of the Japan Society of Applied Physics, Hokkaido, Japan (2007).
11.	Non-destructive Readout Characteristic of a Polycrystalline Ferroelectric Gate FET Memory with an Intermediate Electrode  Bui Nguyen Quoc Trinh and Susumu Horita Extended Abstract of 5^th Asian Meeting on Ferroelectrics (AMF05), Noda, Japan, 30 (2006).
12.	Basic Operation of a New Ferroelectric Gate FET Memory using Poly-crystalline PZT Films Bui Nguyen Quoc Trinh, Hiroyuki Kamiya, Kensuke Nishioka and Susumu Horita Extended Abstract of 53^rd Spring Meeting of the Japan Society of Applied Physics, Tokyo, Japan, 606 (2006).
13.	Operation of a Polycrystalline Ferroelectric Gate FET Memory with an Intermediate Electrode Bui Nguyen Quoc Trinh and Susumu Horita Extended Abstract of 23^rd Meeting on Ferroelectric Materials and Their Applications (FMA-23), Kyoto, Japan, 191-192 (2006).
14.	Analysis on Basic Operation of Polycrystalline Ferroelectric Gate FET Memory with an Intermediate Electrode Bui Nguyen Quoc Trinh and Susumu Horita Extended Abstract of International Symposium on Nano Technology 2006 (NT2006), Ishikawa, Japan 55-56 (2006).
15.	Influence of Pt/RuO2 Double Layer Structure on Properties of the PZT Film Bui Nguyen Quoc Trinh, Kensuke Nishioka and Susumu Horita Extended Abstract of 66^th Autumn Meeting of the Japan Society of Applied Physics, Tokushima, Japan 472 (2005).
16.	Thin Film Bi2Te3 (N)-(Bi0.4Sb1.6)2Te3 (P) Thermopiles  for Remote Temperature Measurement Bui Nguyen Quoc Trinh, Tran Vinh Thang, Do Trung Kien and Le Van Vu Proceedings of 9^th Vietnam Conference on Radio and Electronics (REV’04), Hanoi, Vietnam, p382-385 (2004).
17.	Studying the Structure of the Thermo-evaporated Bi0.4Sb1.6Te3 Thin Films by SEM and EDS Le Van Vu and Bui Nguyen Quoc Trinh Proceedings of 4^th Asian Microscopy Conference and 3^rd Vietnam Conference on Electron Microscopy, Hanoi, Vietnam, p207-211 (2004).
18.	Effect of Fe Substitution on Spin Reorientation in ErCo10-xFexMo2 Compounds Nguyen Hoang Luong, Nguyen Chau, Nguyen Duc Dung and Bui Nguyen Quoc Trinh Proceedings of 8^th Vietnam Conference on Radio and Electronics (REV’02), Hanoi, Vietnam, p294-296 (2002).