Magnetoelectric sensor for microtesla magnetic-fields based on (Fe80Co20)78Si12B10/PZT laminates

Giang D.T.H., Duc N.H.
Laboratory for Nano Magnetic Materials and Devices, Faculty of Engineering Physics and Nanotechnology, College of Technology, E3 Building, 144 Xuan Thuy Road, Cau Giay, Hanoi, Viet Nam

Abstract: The magnetoelectric sensor based on (Fe80Co20)78Si12B10/PZT laminates is designed, fabricated and characterized for determining dc and ac magnetic-field strengths as well as field orientations. At low dc magnetic-fields, a ME-voltage response (dVME/dH) as high as 2 mV/Oe is achieved. The linear relation VME(hac) with a slope of dVME/dhac of 17 mV/Oe shows a great ability to self-powered detecting low ac magnetic-fields. The field orientation can be detected by using the sinusoidal dependence of the magnetoelectric voltage. The sensor is promising not only for microtesla magnetic-field sensing but also for magnetic biosensor applications. © 2008 Elsevier B.V. All rights reserved.
Author Keywords: Magnetic sensor; Magnetoelectric; Magnetostrictive; Multiferroics; Piezoelectric

Year: 2009
Source title: Sensors and Actuators, A: Physical
Volume: 149
Issue: 2
Page : 229-232
Cited by: 3
Link: Scorpus Link
Document Type: Article
Source: Scopus
Authors with affiliations:

1. Giang, D.T.H., Laboratory for Nano Magnetic Materials and Devices, Faculty of Engineering Physics and Nanotechnology, College of Technology, E3 Building, 144 Xuan Thuy Road, Cau Giay, Hanoi, Viet Nam
2. Duc, N.H., Laboratory for Nano Magnetic Materials and Devices, Faculty of Engineering Physics and Nanotechnology, College of Technology, E3 Building, 144 Xuan Thuy Road, Cau Giay, Hanoi, Viet Nam

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