CMOS-MEMS single-axis magnetic-field sensor for measuring geomagnetic field disturbance

Lai S.-W., Kuo T.-C., Kiang J.-F.
Department of Electrical Engineering, Graduate Institute of Communication Engineering, National Taiwan University, Taipei, Taiwan

Abstract: A single-axis magnetic-field sensor is designed and implemented using TSMC 0.18μm 1P6M process for MEMS, which converts the time-varying magnetic flux into an electric signal via a capacitance-to-voltage (CV) converter. The frequency of the applied ac current is close to the resonant frequency of the MEMS structure so that efficient energy transfer from the ac current to the MEMS structure can take place. The measurable magnetic field ranges from 0.01 to 0.7 Gauss, sensitive enough to measure the geomagnetic field disturbance. The simulated sensitivity of this magnetic-field sensor is 2 mV/mGauss.

Year: 2010
Source title: International Microsystems Packaging Assembly and Circuits Technology Conference, IMPACT 2010 and International 3D IC Conference, Proceedings
Art. No.: 5699593
Link: Scorpus Link
Document Type: Conference Paper
Source: Scopus
Authors with affiliations:

1. Lai, S.-W., Department of Electrical Engineering, Graduate Institute of Communication Engineering, National Taiwan University, Taipei, Taiwan
2. Kuo, T.-C., Department of Electrical Engineering, Graduate Institute of Communication Engineering, National Taiwan University, Taipei, Taiwan
3. Kiang, J.-F., Department of Electrical Engineering, Graduate Institute of Communication Engineering, National Taiwan University, Taipei, Taiwan

Download Abstract: geo8.pdf