Optimization of the multilayer structures for a high field-sensitivity biochip sensor based on the planar Hall effect

Hung T.Q., Oh S., Anandakumar S., Jeong J.-R., Kim D.-Y., Kim C.
Department of Materials Science and Engineering, Chungnam National University, Daejeon 305-764, South Korea; Center for NanoBioEngineering and Spintronics, Chungnam National University, Yuseong-gu, Daejeon 305-764, South Korea; Department of Physics, Andong National University, Andong 760-749, South Korea

Abstract: We have investigated the planar Hall effect (PHE) in three multilayer structures such as a bilayer, a spin-valve and a weak exchange bias coupling bilayer structure introduced a very thin Cu spacer layer between the antiferromagnetic and ferromagnetic layers. These thin films are Ta(3)/NiFe(10)/IrMn(10)/Ta(3) (nm), Ta(3)/NiFe(10)/Cu(1.2)/NiFe(2)/IrMn(10)/ Ta(3) (nm), and Ta(3)/NiFe(10)/Cu(0.2)/ IrMn(10)/Ta(3) (nm), respectively. The active layers in all three structures were kept constant. The field-sensitivity of the fabricated PHE sensors obtained for the respected structures are about 1.6 μV Oe-1 5 μV Oe-1, and 12 μV Oe-1 respectively. The results suggest that the sensor based on a weak exchange bias coupling structure has the highest field-sensitivity compared with the others. The proposed weak exchange bias coupling structure emphasizes for the development of the PHE sensor materials. © 2009 IEEE.
Author Keywords: Biomagnetics; High-field sensitivity; Planar Hall effect (PHE) sensor

Year: 2009
Source title: IEEE Transactions on Magnetics
Volume: 45
Issue: 10
Art. No.: 5257330
Page : 4518-4521
Cited by: 1
Link: Scorpus Link
Document Type: Conference Paper
Source: Scopus
 Authors with affiliations:
  1. Hung, T.Q., Department of Materials Science and Engineering, Chungnam National University, Daejeon 305-764, South Korea, Center for NanoBioEngineering and Spintronics, Chungnam National University, Yuseong-gu, Daejeon 305-764, South Korea
  2. Oh, S., Department of Materials Science and Engineering, Chungnam National University, Daejeon 305-764, South Korea, Center for NanoBioEngineering and Spintronics, Chungnam National University, Yuseong-gu, Daejeon 305-764, South Korea
  3. Anandakumar, S., Department of Materials Science and Engineering, Chungnam National University, Daejeon 305-764, South Korea, Center for NanoBioEngineering and Spintronics, Chungnam National University, Yuseong-gu, Daejeon 305-764, South Korea
  4. Jeong, J.-R., Department of Materials Science and Engineering, Chungnam National University, Daejeon 305-764, South Korea, Center for NanoBioEngineering and Spintronics, Chungnam National University, Yuseong-gu, Daejeon 305-764, South Korea
  5. Kim, D.-Y., Department of Physics, Andong National University, Andong 760-749, South Korea
  6. Kim, C., Department of Materials Science and Engineering, Chungnam National University, Daejeon 305-764, South Korea, Center for NanoBioEngineering and Spintronics, Chungnam National University, Yuseong-gu, Daejeon 305-764, South Korea
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